Semiconductor device and method for manufacturing the same
US8459561B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2008 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Jan 4, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31522
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A separation layer and a semiconductor element layer including a thin film transistor are formed. A conductive resin electrically connected to the semiconductor element layer is formed. A first sealing layer including a fiber and an organic resin layer is formed over the semiconductor element layer and the conductive resin. A groove is formed in the first sealing layer, the semiconductor element layer, and the separation layer. A liquid is dropped into the groove to separate the separation layer and the semiconductor element layer. The first sealing layer over the conductive resin is removed to form an opening. A set of the first sealing layer and the semiconductor element layer is divided into a chip. The chip is bonded to an antenna formed over a base material. A second sealing layer including a fiber and an organic resin layer is formed so as to cover the antenna and the chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.