Exhaust for CVD reactor
US8460466B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 2, 2010 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Dec 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68771
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition reactor and a method of wafer processing are provided. The reactor includes a reaction chamber having an interior, a gas inlet manifold communicating with the interior of the chamber, an exhaust system including an exhaust manifold having a passage and one or more ports, and one or more cleaning elements mounted within the chamber. The gas inlet manifold can admit process gasses to form a deposit on substrates held within the interior. The passage can communicate with the interior of the chamber through the one or more ports. The one or more cleaning elements are movable between (i) a run position in which the cleaning elements are remote from the one or more ports and (ii) a cleaning position in which the one or more cleaning elements are engaged in the one or more ports.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.