Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes
US8460753B2 · kind B2 · utility
21Cited by
2References
16Claims
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Key dates
| Filing date | Dec 9, 2010 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Dec 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described herein are methods to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.