STI structure and method of forming bottom void in same
US8461015B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2010 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Feb 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an STI structure is provided. In one embodiment, a trench is formed in a substrate, the trench having a first sidewall and a second sidewall opposite the first sidewall, the sidewalls extending down to a bottom portion of the trench. An insulating material is deposited to line the surfaces of the sidewalls and the bottom portion. The insulating material proximate the top portions and the bottom portion of the trench are thereafter etched back. The insulating material is deposited to line the inside surfaces of the trench at a rate sufficient to allow a first protruding insulating material deposited on the first sidewall and a second protruding insulating material deposited on the second sidewall to approach theretogether. The steps of etching back and depositing are repeated to have the first and second protruding materials abut, thereby forming a void near the bottom of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.