Method of processing device wafer
US8461019B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2011 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Dec 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1461
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a device wafer includes the carrier wafer preparing step of preparing a carrier wafer including an excessive carrier region on a surface thereof which is disposed in a position corresponding to an excessive outer circumferential region on a surface of the device wafer, the recess forming step of forming a recess in the excessive carrier region the carrier wafer, after the recess forming step, the adhesive placing step of placing an adhesive in the recess so as to project from the surface of the carrier wafer, after the adhesive placing step, the wafer bonding step of bonding the surface of the carrier wafer and the surface of the device wafer to each other, thereby securing the device wafer to the carrier wafer with the adhesive, and after the wafer bonding step, the thinning step of thinning the device wafer to a predetermined thickness by grinding or polishing a reverse side of the device wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.