Taper-etching method and method of manufacturing near-field light generator
US8461050B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2011 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Sep 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of taper-etching a layer to be etched that is made of SiO2 or SiON and has a top surface. The method includes the step of forming an etching mask with an opening on the top surface of the layer to be etched, and the step of taper-etching a portion of the layer to be etched, the portion being exposed from the opening, by reactive ion etching so that a groove having two wall faces that intersect at a predetermined angle is formed in the layer to be etched. The etching mask is formed of a material containing elemental Al. The step of taper-etching employs an etching gas that contains a main component gas, which contributes to the etching of the layer to be etched, and N2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.