Batch CVD method and apparatus for semiconductor process
US8461059B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2010 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Jun 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A batch CVD method repeats a cycle including adsorption and reaction steps along with a step of removing residual gas. The adsorption step is preformed while supplying the source gas into the process container by first setting the source gas valve open for a first period and then setting the source gas valve closed, without supplying the reactive gas into the process container by keeping the reactive gas valve closed, and without exhausting gas from inside the process container by keeping the exhaust valve closed. The reaction step is performed without supplying the source gas into the process container by keeping the source gas valve closed, while supplying the reactive gas into the process container by setting the reactive gas valve open, and exhausting gas from inside the process container by setting the exhaust valve to gradually decrease its valve opening degree from a predetermined open state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.