Patent · US Active

Ion-sensitive sensor with multilayer construction in the sensitive region

US8461587B2 · kind B2 · utility

3Cited by

6References

9Claims

0Family size

Assignee

Endress+Hauser Conducta Gesellschaft fuer Mess- und Regeltechnik mbH + Co. KG · DE

Inventors

Eberhard Kurth · Radebeul, DE
Christian Kunath · Dresden, DE
Torsten Pechstein · Radebeul, DE

Key dates

Filing date	Mar 15, 2010
Grant date	Jun 11, 2013
Priority date	—
Expiry date	Mar 27, 2030

Classification

Technology area (CPC G)Physics
CPC primaryG01N27/227
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

An ion-sensitive sensor with an EIS structure includes: a semiconductor substrate, on which a layer of a substrate oxide 103 is produced; an adapting or matching layer, which is prepared on the substrate oxide; a chemically stable intermediate insulator, which is deposited on the adapting or matching layer; and a sensor layer, which comprises a tantalum oxide or a tantalum oxynitride, and which is applied on the intermediate insulator; wherein the intermediate insulator comprises hafnium oxide or zirconium oxide or a mixture of zirconium oxide and hafnium oxide, and wherein the adapting or matching layer differs in its chemical composition and/or in its structure from the intermediate insulator and from the substrate oxide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.