Self-forming, self-aligned barriers for back-end interconnects and methods of making same
US8461683B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2011 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Apr 18, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/927
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Processes of forming an insulated wire into an interlayer dielectric layer (ILD) of a back-end metallization includes thermally treating a metallic barrier precursor under conditions to cause at least one alloying element in the barrier precursor to form a dielectric barrier between the wire and the ILD. The dielectric barrier is therefore a self-forming, self-aligned barrier. Thermal processing is done under conditions to cause the at least one alloying element to migrate from a zone of higher concentration thereof to a zone of lower concentration thereof to further form the dielectric barrier. Various apparatus are made by the process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.