Method and apparatus to reset a phase change memory and switch (PCMS) memory cell
US8462537B2 · kind B2 · utility
53Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2011 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Sep 21, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0076
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to the fabrication of non-volatile memory devices. In at least one embodiment, the non-volatile memory of the present disclosure may include a phase change memory and switch (hereinafter “PCMS”) memory cell and a process for resetting the PCMS memory utilizing a “look-up” table to calculate a current required to place a bit above a reference level to maximum threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.