Inventor · Scotts Valley, CA, US

Gianpaolo Spadini

43Patents

11h-index

24Co-inventors

75Inventor score

Filing activity: Mar 27, 1995 → May 18, 2020

Most-cited inventions

Patent	Title	Area	Cited by	Status
US8385100B2	Energy-efficient set write of phase change memory with switch	Physics	77	Active
US8462537B2	Method and apparatus to reset a phase change memory and switch (PCMS) memory cell	Physics	53	Active
US8404514B2	Fabricating current-confining structures in phase change memory switch cells	Electricity	30	Active
US9590012B2	Self-aligned cross-point phase change memory-switch array	Electricity	28	Active
US9245926B2	Apparatuses and methods including memory access in cross point memory	Electricity	26	Active
US8765581B2	Self-aligned cross-point phase change memory-switch array	Electricity	26	Active
US6219279A	Non-volatile memory program driver and read reference circuits	Physics	25	Expired
US8345472B2	Three-terminal ovonic threshold switch as a current driver in a phase change memory	Physics	22	Active
US9368554B2	Apparatuses and methods including memory access in cross point memory	Electricity	14	Active
US9576659B2	Apparatuses and methods including memory access in cross point memory	Electricity	13	Active
US9306165B2	Replacement materials processes for forming cross point memory	Electricity	11	Active
US9021227B2	Drift management in a phase change memory and switch (PCMS) memory device	Physics	8	Active
US9734907B2	Apparatuses and methods including memory access in cross point memory	Electricity	8	Active
US9117503B2	Memory array plane select and methods	Physics	8	Active
US9543003B2	Memory array plane select	Physics	8	Active
US9905296B2	Apparatuses and methods including memory access in cross point memory	Electricity	6	Active
US8278641B2	Fabricating current-confining structures in phase change memory switch cells	Electricity	6	Active
US6300183A	Independently programmable memory segments within a PMOS electrically erasable programmable read only memory array achieved by N-well separation and method therefor	Electricity	5	Expired
US8184469B2	Stored multi-bit data characterized by multiple-dimensional memory states	Physics	5	Active
US7990761B2	Immunity of phase change material to disturb in the amorphous phase	Physics	5	Active
US5733795A	Method of fabricating a MOS read-only semiconductor memory array	Electricity	4	Expired
US10090050B2	Apparatuses and methods including memory access in cross point memory	Electricity	4	Active
US6504191B2	Independently programmable memory segments within a PMOS electrically erasable programmable read only memory array achieved by N-well separation and method therefor	Electricity	4	Expired
US10050084B2	Replacement materials processes for forming cross point memory	Electricity	3	Active
US8971089B2	Low power phase change memory cell	Electricity	3	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.