Program and erase methods for nonvolatile memory
US8462558B2 · kind B2 · utility
2Cited by
36References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 3, 2010 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Aug 3, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3404
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods of programming or erasing a nonvolatile memory device having a charge storage layer including performing at least one unit programming or erasing loop, each unit programming or erasing loop including applying a programming pulse, an erasing pulse, a time delay, a soft erase pulse, soft programming pulse and/or a verifying pulse as a positive or negative voltage to a portion (for example, a word line or a substrate) of the nonvolatile memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.