Providing electron beam proximity effect correction by simulating write operations of polygonal shapes
US8464186B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2011 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Jan 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for writing a design to a material using an electron beam includes assigning a first dosage to a first polygonal shape. The first polygonal shape occupies a first virtual layer and includes a first set of pixels. The method also includes simulating a first write operation using the first polygonal shape to create the design, discerning an error in the simulated first write operation, and assigning a second dosage to a second polygonal shape to reduce the error. The second polygonal shape occupies a second virtual layer. The method further includes creating a data structure that includes the first and second polygonal shapes and saving the data structure to a non-transitory computer-readable medium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.