Methods of adjusting dimensions of resist patterns
US8465901B2 · kind B2 · utility
3Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2010 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Mar 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of adjusting dimensions of resist patterns are provided. The methods allow for control of photoresist pattern dimensions and find particular applicability in resist pattern rework in semiconductor device manufacturing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.