Carbon containing low-k dielectric constant recovery using UV treatment
US8465991B2 · kind B2 · utility
16Cited by
145References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2010 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Jan 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric and associated apparatus enables process induced damage repair. The methods of the invention are particularly applicable in the context of damascene processing to recover lost low-k property of a dielectric damaged during processing, either pre-metallization, post-planarization, or both. UV treatments can include an exposure of the subject low-k dielectric to a constrained UV spectral profile and/or chemical silylating agent, or both.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.