Method for manufacturing multigate device

US8466028B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Huaxiang Yin · Beijing, CN
• Qiuxia Xu · Beijing, CN
• Dapeng Chen · Beijing, CN

Key dates

• Filing date: Jul 27, 2011
• Grant date: Jun 18, 2013
• Expiry date: Sep 6, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/024

Abstract

A method for manufacturing a multigate device is provided, comprising: providing a semiconductor substrate; etching the semiconductor substrate to form a protruding fin; etching the semiconductor substrate at the bottom of the fin so as to form a gap between the fin and the semiconductor substrate; forming a dielectric layer which covers the semiconductor substrate and the fin and fills the gap; and etching the dielectric layer so as to expose the top and a portion of sidewalls of the fin. The present invention can realize isolation between fins with a simple process, which costs relatively low and is suitable for massive industrial application.