Dapeng Chen
55Patents
6h-index
63Co-inventors
71Inventor score
Filing activity: Jun 23, 2010 → Dec 7, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8652891B1 | Semiconductor device and method of manufacturing the same | Electricity | 12 | Active |
| US8252689B2 | Chemical-mechanical planarization method and method for fabricating metal gate in gate-last process | Electricity | 8 | Active |
| US9384986B2 | Dual-metal gate CMOS devices and method for manufacturing the same | Electricity | 7 | Active |
| US8486805B2 | Through-silicon via and method for forming the same | Electricity | 7 | Active |
| US8466028B2 | Method for manufacturing multigate device | Electricity | 6 | Active |
| US8754482B2 | Semiconductor device and manufacturing method thereof | Electricity | 6 | Active |
| US8501500B2 | Method for monitoring the removal of polysilicon pseudo gates | Electricity | 5 | Active |
| US8816326B2 | Semiconductor device and manufacturing method thereof | Emerging Cross-Sectional Technologies | 5 | Active |
| US8384162B2 | Device having adjustable channel stress and method thereof | Electricity | 4 | Active |
| US8994119B2 | Semiconductor device with gate stacks having stress and method of manufacturing the same | Electricity | 4 | Active |
| US9892912B2 | Method of manufacturing stacked nanowire MOS transistor | Electricity | 4 | Active |
| US8507991B2 | Semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 3 | Active |
| US8410541B2 | CMOSFET device with controlled threshold voltage characteristics and method of fabricating the same | Electricity | 3 | Active |
| US8410555B2 | CMOSFET device with controlled threshold voltage and method of fabricating the same | Electricity | 3 | Active |
| US11225830B2 | Vertical sliding window | Fixed Constructions | 3 | Active |
| US8664119B2 | Semiconductor device manufacturing method | Electricity | 2 | Active |
| US8541296B2 | Method of manufacturing dummy gates in gate last process | Electricity | 2 | Active |
| US9276085B2 | Semiconductor structure and method for manufacturing the same | Electricity | 2 | Active |
| US8853024B2 | Method of manufacturing semiconductor device | Electricity | 2 | Active |
| US9136181B2 | Method for manufacturing semiconductor device | Electricity | 2 | Active |
| US8324061B2 | Method for manufacturing semiconductor device | Electricity | 2 | Active |
| US8222099B2 | Semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 2 | Active |
| US11429809B2 | Image processing method, image processing device, and storage medium | Physics | 1 | Active |
| US8415222B2 | Semiconductor device and method for manufacturing the same | Electricity | 1 | Active |
| US9312187B2 | Semiconductor device and method of manufacturing the same | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.