Thermal conduction paths for semiconductor structures
US8466054B2 · kind B2 · utility
12Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2011 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Dec 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/09701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thermal path is formed in a layer transferred semiconductor structure. The layer transferred semiconductor structure has a semiconductor wafer and a handle wafer bonded to a top side of the semiconductor wafer. The semiconductor wafer has an active device layer formed therein. The thermal path is in contact with the active device layer within the semiconductor wafer. In some embodiments, the thermal path extends from the active device layer to a substrate layer of the handle wafer. In some embodiments, the thermal path extends from the active device layer to a back side external thermal contact below the active device layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.