Techniques for improving extracted ion beam quality using high-transparency electrodes

US8466431B2 · kind B2 · utility

Assignee

• Varian Semiconductor Equipment Associates, Inc. · US

Inventors

• James S. Buff · Brookline, US
• Svetlana B. Radovanov · Marblehead, US
• Bon-Woong Koo · Andover, US
• Wilhelm P. Platow · Salem, US
• Frank Sinclair · Quincy, US
• D. Jeffrey Lischer · Acton, US
• Craig R. Chaney · Rockport, US
• Steven C. Borichevsky · Gloucester, US
• Eric R. Cobb · Danvers, US
• Mayur Jagtap · Frisco, US
• Kenneth H. Purser · Lexington, US
• Victor M. Benveniste · Gloucester, US
• Shardul S. Patel · Chelmsford, US

Key dates

• Filing date: Feb 12, 2009
• Grant date: Jun 18, 2013
• Expiry date: Jan 31, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/24542
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.