Resistive random access memory and method of manufacturing the same
US8466461B2 · kind B2 · utility
8Cited by
15References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 28, 2007 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Oct 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Example embodiments relate to a resistive random access memory (RRAM) and a method of manufacturing the RRAM. A RRAM according to example embodiments may include a lower electrode, which may be formed on a lower structure (e.g., substrate). A resistive layer may be formed on the lower electrode, wherein the resistive layer may include a transition metal dopant. An upper electrode may be formed on the resistive layer. Accordingly, the transition metal dopant may form a filament in the resistive layer that operates as a current path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.