Nitride semiconductor free-standing substrate and method for making same
US8466471B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2008 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Sep 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride semiconductor free-standing substrate includes a nitride semiconductor crystal and an inversion domain with a density of not less than 10/cm2 and not more than 600/cm2 in a section parallel to a surface of the substrate and inside the substrate. A method for making the nitride semiconductor free-standing substrate includes a nitride semiconductor crystal growth step of growing on a heterosubstrate a nitride semiconductor crystal including an inversion domain with a density of not less than 10/cm2 and not more than 600/cm2 by adjusting a growth condition at an initial growth stage of the nitride semiconductor crystal, and a separation step for separating the grown nitride semiconductor crystal from the heterosubstrate to form the nitride semiconductor free-standing substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.