Semiconductor component with improved softness
US8466491B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 12, 2011 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Dec 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor component includes a semiconductor body, a first emitter region of a first conductivity type in the semiconductor body, a second emitter region of a second conductivity type arranged distant to the first emitter region in a vertical direction of the semiconductor body, a base region of one of the first and second conductivity types arranged between the first and second emitter regions and having a lower doping concentration than the first second emitter regions, a first field stop zone of the same conductivity type as the base region arranged in the base region, and a second field stop zone of the same conductivity type as the base region arranged in the base region. The second field stop zone is arranged distant to the first field stop in the vertical direction of the semiconductor, the first field stop zone is arranged between the second field stop zone and the second emitter zone, and the second field stop zone includes a plurality of field stop zone sections arranged mutually distant from each other in at least one horizontal direction of the semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.