Dorothea Werber
14Patents
4h-index
12Co-inventors
53Inventor score
Filing activity: May 12, 2011 → May 10, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9337270B2 | Semiconductor device | Electricity | 5 | Active |
| US9209109B2 | IGBT with emitter electrode electrically connected with an impurity zone | Electricity | 5 | Active |
| US8466491B2 | Semiconductor component with improved softness | Electricity | 5 | Active |
| US9159819B2 | Semiconductor device and RC-IGBT with zones directly adjoining a rear side electrode | Electricity | 4 | Active |
| US9337185B2 | Semiconductor devices | Electricity | 3 | Active |
| US9337827B2 | Electronic circuit with a reverse-conducting IGBT and gate driver circuit | Electricity | 3 | Active |
| US9214521B2 | Reverse conducting IGBT | Electricity | 2 | Active |
| US9240450B2 | IGBT with emitter electrode electrically connected with impurity zone | Electricity | 1 | Active |
| US9018674B2 | Reverse conducting insulated gate bipolar transistor | Electricity | 1 | Active |
| US11575032B2 | Vertical power semiconductor device and manufacturing method | Electricity | 0 | Active |
| US9711626B2 | Reverse-conducting IGBT | Electricity | 0 | Active |
| US9231581B2 | Method of operating a reverse conducting IGBT | Electricity | 0 | Active |
| US9362349B2 | Semiconductor device with charge carrier lifetime reduction means | Electricity | 0 | Active |
| US9571087B2 | Method of operating a reverse conducting IGBT | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.