Patent · US Active

Low inductance power module

US8466541B2 · kind B2 · utility

8Cited by
0References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 31, 2011
Grant dateJun 18, 2013
Priority date
Expiry dateOct 31, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/30107
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A power module includes a housing, a power semiconductor die enclosed within the housing and a first power terminal embedded in the housing and electrically connected to the power semiconductor die. A portion of the first power terminal protrudes outward from an external surface of the housing. The power module further includes a second power terminal embedded in the housing and electrically connected to the power semiconductor die and electrically insulated from the first power terminal. A portion of the second power terminal protrudes outward from the external surface of the housing by a distance less than the portion of the first power terminal so that the module has power connections with different heights.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.