Semiconductor device, method for manufacturing of semiconductor device, and switching circuit
US8466566B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2011 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Feb 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
It is an objective to provide a semiconductor device with low leak current. The semiconductor device includes a plurality of ground side electrodes and a plurality of signal side electrodes arranged on a semiconductor substrate in an alternating manner; a plurality of control electrodes arranged respectively between each pair of a ground side electrode and a signal side electrode; a ground side electrode connecting section that connects the ground side electrodes to each other; a signal side electrode connecting section that connects the signal side electrodes to each other; and ground side lead wiring and signal side lead wiring that extend respectively from a region near one end and a region near another end of an arranged electrode section, in which the ground side electrodes and the signal side electrodes are arranged in an arrangement direction, away from the arranged electrode group in the arrangement direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.