Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom

US8467224B2 · kind B2 · utility

Assignee

• SanDisk 3D LLC · US

Inventors

• April D. Schricker · Fremont, US
• Mark Clark · Santa Clara, US
• Andy Fu · San Ramon, US
• Huiwen Xu · Shanghai, CN

Key dates

• Filing date: Apr 9, 2009
• Grant date: Jun 18, 2013
• Expiry date: Sep 15, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8845

Abstract

In some aspects, a microelectronic structure is provided that includes (1) a first conducting layer; (2) a first dielectric layer formed above the first conducting layer and having a feature that exposes a portion of the first conducting layer; (3) a graphitic carbon film disposed on a sidewall of the feature defined by the first dielectric layer and in contact with the first conducting layer at a bottom of the feature; and (4) a second conducting layer disposed above and in contact with the graphitic carbon film. Numerous other aspects are provided.