Hetero resistive switching material layer in RRAM device and method
US8467227B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 4, 2011 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Nov 4, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/33
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device includes a first electrode, a resistive switching material stack overlying the first electrode. The resistive switching material stack comprising a first resistive switching material and a second resistive switching material. The second resistive switching material overlies the first electrode and the first resistive switching material overlying the second resistive switching material. The first resistive switching material is characterized by a first switching voltage having a first amplitude. The second resistive switching material is characterized by a second switching voltage having a second amplitude no greater than the first switching voltage. A second electrode comprising at least a metal material physically and electrically in contact with the first resistive switching material overlies the first resistive switching material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.