Patent assignee · US · COMPANY

CrossBar, Inc.

251Patents
249Active
251Granted
60Portfolio score

Filing activity: Aug 16, 1996 → Mar 5, 2024 · 16 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US9570683B1 Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects Physics 178 Active
US8088688B1 p+ polysilicon material on aluminum for non-volatile memory device and method Electricity 94 Active
US8320160B2 NAND architecture having a resistive memory cell connected to a control gate of a field-effect transistor Physics 81 Active
US8168506B2 On/off ratio for non-volatile memory device and method Electricity 79 Active
US8374018B2 Resistive memory using SiGe material Physics 78 Active
US8394670B2 Vertical diodes for non-volatile memory device Electricity 76 Active
US8315079B2 Circuit for concurrent read operation and method therefor Physics 68 Active
US8467227B1 Hetero resistive switching material layer in RRAM device and method Physics 68 Active
US8658476B1 Low temperature P+ polycrystalline silicon material for non-volatile memory device Electricity 63 Active
US8659003B2 Disturb-resistant non-volatile memory device and method Electricity 60 Active
US8274812B2 Write and erase scheme for resistive memory device Emerging Cross-Sectional Technologies 60 Active
US10056907B1 Field programmable gate array utilizing two-terminal non-volatile memory Electricity 59 Active
US8198144B2 Pillar structure for memory device and method Electricity 59 Active
US8187945B2 Method for obtaining smooth, continuous silver film Electricity 59 Active
US8258020B2 Interconnects for stacked non-volatile memory device and method Electricity 58 Active
US8502185B2 Switching device having a non-linear element Electricity 50 Active
US8441835B2 Interface control for improved switching in RRAM Physics 46 Active
US8399307B2 Interconnects for stacked non-volatile memory device and method Electricity 40 Active
US8619459B1 High operating speed resistive random access memory Physics 33 Active
US8675384B2 Circuit for concurrent read operation and method therefor Physics 32 Active
US8934280B1 Capacitive discharge programming for two-terminal memory cells Physics 30 Active
US8947908B2 Hetero-switching layer in a RRAM device and method Physics 26 Active
US8946673B1 Resistive switching device structure with improved data retention for non-volatile memory device and method Electricity 25 Active
US9093635B2 Controlling on-state current for two-terminal memory Electricity 24 Active
US8946667B1 Barrier structure for a silver based RRAM and method Electricity 24 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.