CrossBar, Inc.
251Patents
249Active
251Granted
60Portfolio score
Filing activity: Aug 16, 1996 → Mar 5, 2024 · 16 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9570683B1 | Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects | Physics | 178 | Active |
| US8088688B1 | p+ polysilicon material on aluminum for non-volatile memory device and method | Electricity | 94 | Active |
| US8320160B2 | NAND architecture having a resistive memory cell connected to a control gate of a field-effect transistor | Physics | 81 | Active |
| US8168506B2 | On/off ratio for non-volatile memory device and method | Electricity | 79 | Active |
| US8374018B2 | Resistive memory using SiGe material | Physics | 78 | Active |
| US8394670B2 | Vertical diodes for non-volatile memory device | Electricity | 76 | Active |
| US8315079B2 | Circuit for concurrent read operation and method therefor | Physics | 68 | Active |
| US8467227B1 | Hetero resistive switching material layer in RRAM device and method | Physics | 68 | Active |
| US8658476B1 | Low temperature P+ polycrystalline silicon material for non-volatile memory device | Electricity | 63 | Active |
| US8659003B2 | Disturb-resistant non-volatile memory device and method | Electricity | 60 | Active |
| US8274812B2 | Write and erase scheme for resistive memory device | Emerging Cross-Sectional Technologies | 60 | Active |
| US10056907B1 | Field programmable gate array utilizing two-terminal non-volatile memory | Electricity | 59 | Active |
| US8198144B2 | Pillar structure for memory device and method | Electricity | 59 | Active |
| US8187945B2 | Method for obtaining smooth, continuous silver film | Electricity | 59 | Active |
| US8258020B2 | Interconnects for stacked non-volatile memory device and method | Electricity | 58 | Active |
| US8502185B2 | Switching device having a non-linear element | Electricity | 50 | Active |
| US8441835B2 | Interface control for improved switching in RRAM | Physics | 46 | Active |
| US8399307B2 | Interconnects for stacked non-volatile memory device and method | Electricity | 40 | Active |
| US8619459B1 | High operating speed resistive random access memory | Physics | 33 | Active |
| US8675384B2 | Circuit for concurrent read operation and method therefor | Physics | 32 | Active |
| US8934280B1 | Capacitive discharge programming for two-terminal memory cells | Physics | 30 | Active |
| US8947908B2 | Hetero-switching layer in a RRAM device and method | Physics | 26 | Active |
| US8946673B1 | Resistive switching device structure with improved data retention for non-volatile memory device and method | Electricity | 25 | Active |
| US9093635B2 | Controlling on-state current for two-terminal memory | Electricity | 24 | Active |
| US8946667B1 | Barrier structure for a silver based RRAM and method | Electricity | 24 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.