Method of depositing a metal-containing dielectric film

US8470402B2 · kind B2 · utility

Assignee

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR

Inventors

• Christian Dussarrat · Tokyo, JP
• Nicolas Blasco · Grenoble, FR
• Audrey Pinchart · Antony, FR
• Christophe Lachaud · Saint-Michel-sur-Orge, FR

Key dates

• Filing date: Jan 20, 2011
• Grant date: Jun 25, 2013
• Expiry date: Dec 16, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of depositing a metal containing dielectric film on a substrate are disclosed. The metal containing dielectric film has the formula (M11-a M2a) Ob Nc, wherein 0≦a<1, 0<b≦3, 0≦c≦1, M1 represents a metal selected from (Hf) or (Zr); and M2 represents a metal atom. The method generally uses an M1 metal containing precursor selected from: Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, or Hf(tBu2Cp)(NMe2)3.