Chemically amplified negative resist composition for EB or EUV lithography and patterning process
US8470511B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2011 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Jun 22, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/038
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble polymer, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component, the polymer (A) turning alkali insoluble under the catalysis of acid. A basic polymer having a secondary or tertiary amine structure on a side chain serves as components (A) and (C). Processing the negative resist composition by EB or EUV lithography process may form a fine size resist pattern with advantages including uniform diffusion of base, improved LER, controlled deactivation of acid at the substrate interface, and a reduced degree of undercut.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.