Polymer, chemically amplified negative resist composition, and patterning process
US8470512B2 · kind B2 · utility
8Cited by
5References
10Claims
0Family size
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Key dates
| Filing date | Jul 27, 2011 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Aug 22, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0045
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A polymer is provided comprising recurring units having a N,N′-bis(alkoxymethyl)tetrahydropyrimidinone or N,N′-bis(hydroxymethyl)tetrahydropyrimidinone structure on a side chain. When a chemically amplified negative resist composition is formulated using the polymer and processed by lithography, a fine resist pattern can be formed with the advantages of improved LER and high resolution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.