Method of manufacturing a light-emitting diode having electrically active and passive portions

US8470618B2 · kind B2 · utility

Assignee

• CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR

Inventors

• Jean Massies · Paris, FR
• Benjamin Damilano · Paris, FR

Key dates

• Filing date: Sep 15, 2010
• Grant date: Jun 25, 2013
• Expiry date: Sep 15, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H29/10

Abstract

The disclosure relates to a making a matrix of III-V nitride, the matrix including at least an active first portion through which an electrical current passes and at least a passive second portion through which no electrical current passes, the matrix including at least a first zone forming a first quantum confinement region made of a III-V nitride, the first zone being positioned in the active first portion, and at least a second zone forming a second quantum confinement region made of III-V nitride, such that the second zone is positioned to the passive portion of the matrix.