Method for forming pillar type capacitor of semiconductor device
US8470668B2 · kind B2 · utility
29Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2010 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | May 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
An embodiment of the invention includes a pillar type capacitor where a pillar is formed over an upper portion of a storage node contact. A bottom electrode is formed over sidewalls of the pillar, and a dielectric film is formed over pillar and the bottom electrode. A top electrode is then formed over the upper portion of the dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.