Method for making semiconductor device

US8470670B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• John Power · Kilmacthomas, IE
• Danny Pak-Chum Shum · Poughkeepsie, US
• Wolfgang Dickenscheid · Dresden, DE
• Robert Strenz · Radebeul, DE

Key dates

• Filing date: Sep 23, 2009
• Grant date: Jun 25, 2013
• Expiry date: Jul 1, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

One or more embodiments may relate to a method for making a semiconductor device, including: a method for making a semiconductor device, comprising: providing a substrate; forming a charge storage layer over the substrate; forming a control gate layer over the charge storage layer; forming a mask over the control gate layer; using the mask, etching the control gate layer and the charge storage layer; forming a select gate layer over the etched control gate layer and the etched charge storage layer; forming an additional layer over the select gate layer; etching the additional layer to form sidewall spacers over the select gate layer; and etching the select gate layer.