Method of manufacturing silicon carbide semiconductor device
US8470672B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 30, 2011 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Jan 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.