Methods and structures for increased thermal dissipation of thin film resistors
US8470682B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2010 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Jul 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor structure includes forming at least one trench in an insulator layer formed on a substrate. A distance between a bottom edge of the at least one trench and a top surface of a substrate is shorter than a distance between an uppermost surface of the insulator layer and the top surface of the substrate. The method also includes: forming a resistor on the insulator layer and extending into the at least one trench; forming a first contact in contact with the resistor; and forming a second contact in contact with the resistor such that current is configured to flow from the first contact to the second contact through a central portion of the resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.