CD bias loading control with ARC layer open
US8470715B2 · kind B2 · utility
0Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2008 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Oct 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a line pattern in an etch layer disposed below an antireflective coating (ARC) layer below a patterned mask is provided. The method includes opening the ARC layer, in which an ARC opening gas comprising CF3I, a fluorocarbon (including hydrofluorocarbon) containing gas, and an oxygen containing gas are provided, a plasma is formed from the ARC opening gas to open the ARC layer, and providing the ARC opening gas is stopped. Line pattern features are etched into the etch layer through the opened ARC layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.