Passivation for a semiconductor light emitting device

US8471282B2 · kind B2 · utility

Assignees

• KONINKLIJKE PHILIPS ELECTRONICS NV · NL
• Philips Lumileds Lighting Company LLC · US

Inventors

• Frederic Stephane Diana · San Jose, US
• Henry Kwong-Hin Choy · Sunnyvale, US
• Qingwei Mo · Sunnyvale, US
• Serge I. Rudaz · Sunnyvale, US
• Frank Wei · Valencia, US
• Daniel A. Steigerwald · Cupertino, US

Key dates

• Filing date: Jun 7, 2010
• Grant date: Jun 25, 2013
• Expiry date: Dec 2, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/854

Abstract

In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.