Tunnel FET and methods for forming the same

US8471329B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Krishna Kumar Bhuwalka · Suwon-si, KR
• Gerben Doornbos · Kessel-Lo, BE
• Matthias Passlack · Overijse, BE

Key dates

• Filing date: Nov 16, 2011
• Grant date: Jun 25, 2013
• Expiry date: Mar 7, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

A tunnel field-effect transistor (TFET) includes a gate electrode, a source region, and a drain region. The source and drain regions are of opposite conductivity types. A channel region is disposed between the source region and the drain region. A source diffusion barrier is disposed between the channel region and the source region. The source diffusion barrier and the source region are under and overlapping the gate electrode. The source diffusion barrier has a first bandgap greater than second bandgaps of the source region, the drain region, and the channel region.