E-fuse structure of semiconductor device
US8471354B2 · kind B2 · utility
1Cited by
1References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2010 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Dec 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An e-fuse structure includes an anode, a cathode, a fuse part connecting the anode and the cathode to each other, and a dielectric contacting the fuse part. The dielectric is configured to apply a stress to the fuse part, where the stress constructively acting on a migration effect of atoms constituting the fuse part. The migration effect is generated by electromigration and thermomirgration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.