Magnetoresistive effect memory
US8472242B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2010 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Jun 20, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1693
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive effect memory of an aspect of the present invention including a magnetoresistive effect element including a first magnetic layer having an invariable magnetization direction, a second magnetic layer having a variable magnetization direction, and an interlayer provided between the first magnetic layer and the second magnetic layer, and a reading circuit which passes a pulse-shaped read current through the magnetoresistive effect element to read data stored in the magnetoresistive effect element, wherein the pulse width of the read current is shorter than a period from an initial state to a cooperative coherent precession movement of magnetizations included in the second magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.