Patent · US Active

Redundant memory to mask DRAM failures

US8473791B2 · kind B2 · utility

14Cited by
5References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 30, 2007
Grant dateJun 25, 2013
Priority date
Expiry dateMar 26, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C29/76
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A method comprises detecting a defective area in a Dynamic Random Access Memory (DRAM). The method further comprises establishing a redundant memory buffer at a per-memory module level. The method still further comprises loading the redundant memory buffer with a copy of data from the defective area. The method additionally comprises substituting data from the redundant memory buffer for data stored in the defective area upon a memory access to the defective area.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.