Production method for semiconductor device
US8476132B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2010 |
| Grant date | Jul 2, 2013 |
| Priority date | — |
| Expiry date | Dec 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
Abstract
It is intended to provide a method of producing a semiconductor device, comprising the steps of: providing a substrate on one side of which at least one semiconductor pillar stands; forming a first dielectric film to at least partially cover a surface of the at least one semiconductor pillar; forming a conductive film on the first dielectric film; removing by etching a portion of the conductive film located on a top surface and along an upper portion of a side surface of the semiconductor pillar; forming a protective film on at least a part of the top surface and the upper portion of the side surface of the semiconductor pillar; etching back the protective film to form a protective film-based sidewall on respective top surfaces of the conductive film and the first dielectric film each located along the side surface of the semiconductor pillar; forming a resist pattern for forming a gate line in such a manner that at least a portion of the resist pattern is formed on the top surface of the semiconductor pillar by applying a resist and using lithography; and partially removing by etching the conductive film using the resist pattern as a mask while protecting, by the protective film-b…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.