Self-aligned nano-scale device with parallel plate electrodes
US8476530B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2009 |
| Grant date | Jul 2, 2013 |
| Priority date | — |
| Expiry date | Jun 15, 2030 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2201/0292
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A contiguous deep trench includes a first trench portion having a constant width between a pair of first parallel sidewalls, second and third trench portions each having a greater width than the first trench portion and laterally connected to the first trench portion. A non-conformal deposition process is employed to form a conductive layer that has a tapered geometry within the contiguous deep trench portion such that the conductive layer is not present on bottom surfaces of the contiguous deep trench. A gap fill layer is formed to plug the space in the first trench portion. The conductive layer is patterned into two conductive plates each having a tapered vertical portion within the first trench portion. After removing remaining portions of the gap fill layer, a device is formed that has a small separation distance between the tapered vertical portions of the conductive plates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.