GaN-based semiconductor light emitting device and the method for making the same
US8476615B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2011 |
| Grant date | Jul 2, 2013 |
| Priority date | — |
| Expiry date | Jan 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial region 15, an active layer 17, an electron blocking layer 27, and a contact layer 29. The active layer 17 is composed of a GaN-based semiconductor containing indium. The substrate 13 has a dislocation density of 1×107 cm−2 or less. In the GaN-based semiconductor light emitting device 11a provided with the active layer containing indium, a decrease in quantum efficiency under high current injection can be moderated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.