Group III nitride semiconductor and group III nitride semiconductor structure
US8476639B2 · kind B2 · utility
0Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2011 |
| Grant date | Jul 2, 2013 |
| Priority date | — |
| Expiry date | Dec 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/817
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.