Solid state lighting devices and associated methods of manufacturing
US8476640B2 · kind B2 · utility
1Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2012 |
| Grant date | Jul 2, 2013 |
| Priority date | — |
| Expiry date | Mar 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/821
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (InGaN) material directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.