Magnetic memory device
US8476722B2 · kind B2 · utility
15Cited by
2References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2011 |
| Grant date | Jul 2, 2013 |
| Priority date | — |
| Expiry date | Jul 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.