Resistor and manufacturing method thereof
US8477006B2 · kind B2 · utility
7Cited by
47References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2011 |
| Grant date | Jul 2, 2013 |
| Priority date | — |
| Expiry date | Sep 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A manufacturing method for a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, respectively forming a transistor having a dummy gate in the transistor region and a resistor in the resistor region, removing the dummy gate and portions of the resistor to form a first trench in the transistor and two second trenches in the resistor, forming at least a high-k gate dielectric layer in the first trench and the second trenches, and forming a metal gate in the first trench and metal structures respectively in the second trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.