Carbon nanotube growth method
US8481163B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Apr 14, 2004 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Jun 9, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The invention relates to a method of growing carbon nanotubes (5) on a substrate (1) using a hot-wire-assisted chemical vapor deposition method. The inventive method consists in first depositing a bilayer of titanium (12) and cobalt (13) on the substrate such that: the thickness of the titanium layer is between 0.5 and 5 nm, the thickness of the cobalt layer is between 0.25 and 10 nm, and the thickness of the cobalt layer is between half and double that of the titanium layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.